Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb) density, made possible by using an advanced 20 nanometer (nm) class* process technology. The chip is designed to support the high-performance requirements of mobile devices such as smartphones, tablets and solid state drives (SSDs).
